A survey on RF and microwave doherty power amplifier for mobile handset applications

Sajedin, Maryam; Elfergani, I.T.E.; Rodríguez, Jonathan; Abd-Alhameed, Raed; Fernández Barciela, Mónica

doi:10.3390/electronics8060717

Sajedin, Maryam; Elfergani, I.T.E.; Rodríguez, Jonathan; Abd-Alhameed, Raed; Fernández Barciela, Mónica

DATE: 2019-06-25

UNIVERSAL IDENTIFIER: http://hdl.handle.net/11093/3472

EDITED VERSION: https://www.mdpi.com/2079-9292/8/6/717

UNESCO SUBJECT: 3307.08 Dispositivos de Microondas ; 3307.19 Transistores ; 3325.08 Teléfono

DOCUMENT TYPE: article

ABSTRACT

This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.

Show full item record

Files in this item

Name:: electronics-08-00717.pdf
Size:: 13.90Mb
Format:: PDF

View/Open

Share/ send to

Except where otherwise noted, this item's license is described as Attribution 4.0 International