A survey on RF and microwave doherty power amplifier for mobile handset applications
UNIVERSAL IDENTIFIER: http://hdl.handle.net/11093/3472
EDITED VERSION: https://www.mdpi.com/2079-9292/8/6/717
UNESCO SUBJECT: 3307.08 Dispositivos de Microondas ; 3307.19 Transistores ; 3325.08 Teléfono
DOCUMENT TYPE: article
This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.
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