Multi-resonant Class-F power amplifier design for 5G cellular networks
UNIVERSAL IDENTIFIER: http://hdl.handle.net/11093/3478
UNESCO SUBJECT: 3307.08 Dispositivos de Microondas ; 3307.19 Transistores ; 3325.08 Teléfono
DOCUMENT TYPE: article
This work integrates a harmonic tuning mechanism in synergy with the GaN HEMT transistor for 5G mobile transceiver applications. Following a theoretical study on the operational behavior of the Class-F power amplifier (PA), a complete amplifier design procedure is described that includes the proposed Harmonic Control Circuits for the second and third harmonics and optimum loading conditions for phase shifting of the drain current and voltage waveforms. The performance improvement provided by the Class-F configuration is validated by comparing the experimental and simulated results. The designed 10W Class-F PA prototype provides a measured peak drain efficiency of 64.7% at 1dB compression point of the PA at 3.6 GHz frequency.
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