The impact of long-term memory effects on diode power probes
UNIVERSAL IDENTIFIER: http://hdl.handle.net/11093/3486
EDITED VERSION: http://dx.doi.org/10.1109/MWSYM.2010.5514791
UNESCO SUBJECT: 3307.08 Dispositivos de Microondas ; 3307.14 Dispositivos Semiconductores ; 3307.19 Transistores
DOCUMENT TYPE: conferenceObject
This paper presents an analysis of long term-memory effects on power measurements with diode power probes. We show that a power probe calibrated with a single-tone sinusoidal excitation can provide erroneous values when used with modulated signals. This fact is ascribed to the low-frequency response imposed by the power probe baseband circuit. This hypothesis is first theoretically demonstrated by use of a Volterra series, and then validated by simulations and measurements using a diode power probe.
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