Broadband non-linear FET behavioral model defined in the admittance domain
UNIVERSAL IDENTIFIER: http://hdl.handle.net/11093/3505
EDITED VERSION: http://dx.doi.org/10.1109/EuMIC.2016.7777545
UNESCO SUBJECT: 3307.08 Dispositivos de Microondas ; 3307.14 Dispositivos Semiconductores ; 3307.92 Microelectrónica. Tecnologías III-V y Alternativas
DOCUMENT TYPE: conferenceObject
In this paper a broadband non-linear behavioral model, defined in the admittance, Y-parameter, domain rather than the travelling waves, X-parameter, domain, applicable for FETs is presented. This work builds on previous work by incorporating a quadratic dependence of the Large Signal (LS) intrinsic Y-parameters real parts with frequency to extend its bandwidth. Such a model is able to predict large-signal transistor behavior, including the second harmonic, up to close to the device fT. The model has been extracted and validated on WIN GaN HEMT devices.
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