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Exploiting behavioral modelling formulations for nonlinear analytical circuit design and improved frequency scalability: Bandwidth extension through the admittance domain (Invited paper)

Fernández Barciela, MónicaAutor UVIGO; Moure Fernández, María del RocíoAutor UVIGO; Casbon, Michael; Tasker, Paul J; Peláez Pérez, Ana María
DATE: 2017-04
UNIVERSAL IDENTIFIER: http://hdl.handle.net/11093/3506
EDITED VERSION: IEEE
UNESCO SUBJECT: 3307.08 Dispositivos de Microondas ; 3307.14 Dispositivos Semiconductores ; 3307.92 Microelectrónica. Tecnologías III-V y Alternativas
DOCUMENT TYPE: conferenceObject

ABSTRACT

To meet state-of-the-art specs in nonlinear circuit design for high frequency transceivers, we need computational efficient and reliable active device nonlinear models. Frequencydomain behavioral formulations, like X-parameters, have proven successful in this context. In this paper these formulations are exploited, through simplifications and transformations to the admittance/impedance domains, to algebraically guide the complex nonlinear design flow, in particular, in oscillator design. In addition, analytically the transistor behavioral model bandwidth can be extended, through the enhanced frequency scalability provided by the admittance domain. Simulations and measurements, HEMT and HBT devices will be used to validate the described approaches.
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