Fully functional nonlinear table-based HBT model with explicit thermal feedback

Abstract

A fully functional table-based nonlinear model of the heterojunction bipolar transistor (HBT) is presented which includes explicit thermal feedback. The model uses four table-based nonlinear functions: I c , Q c , V be , and Q b , all defined versus I b and V ce by using a nonuniform bias grid. Thermal modeling (self-biasing and environment temperature dependence, T a ) is done by linearly mapping the table-based current functions versus T a coupled with explicit thermal feedback. Four table-based nonlinear coefficients are required to accurately predict the device behavior versus temperature. Excellent results have been obtained under dc, small, and large signal excitations for InGaP/GaAs HBTs in the range 10degC to 110degC.