Fully functional nonlinear table-based HBT model with explicit thermal feedback
UNIVERSAL IDENTIFIER: http://hdl.handle.net/11093/3520
EDITED VERSION: http://ieeexplore.ieee.org/document/4285677/
UNESCO SUBJECT: 3307.08 Dispositivos de Microondas ; 3307.14 Dispositivos Semiconductores ; 3307.92 Microelectrónica. Tecnologías III-V y Alternativas
DOCUMENT TYPE: article
A fully functional table-based nonlinear model of the heterojunction bipolar transistor (HBT) is presented which includes explicit thermal feedback. The model uses four table-based nonlinear functions: I c , Q c , V be , and Q b , all defined versus I b and V ce by using a nonuniform bias grid. Thermal modeling (self-biasing and environment temperature dependence, T a ) is done by linearly mapping the table-based current functions versus T a coupled with explicit thermal feedback. Four table-based nonlinear coefficients are required to accurately predict the device behavior versus temperature. Excellent results have been obtained under dc, small, and large signal excitations for InGaP/GaAs HBTs in the range 10degC to 110degC.
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