A compelet design procedure of an X-band MMIC Class-J Power Amplifier

Abstract

This work presents a complete design process of a high-gain MMIC Class-J power amplifier (PA) based on the 0.25−μm A1GaAs-InGaAs pHEMT technology at X-Band frequencies. The proposed technique can reduce the chip area and improve the energy efficiency. The simulation results indicate that the designed Class-J PA at 6V operation voltage achieves 18dB power gain, 56% PAE and output power of 27.6dBm at 1dB compression. The area size of two-stages PA is 0.9mm2 .