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A compelet design procedure of an X-band MMIC Class-J Power Amplifier

Sajedin, Maryam; Elfergani, Issa; Rodriguez, Jonathan; Abd-Alhameed, Raed; Fernández Barciela, MónicaAutor UVIGO
DATE: 2021-10
UNIVERSAL IDENTIFIER: http://hdl.handle.net/11093/3526
EDITED VERSION: IEEE
UNESCO SUBJECT: 3307.08 Dispositivos de Microondas ; 3307.14 Dispositivos Semiconductores ; 3307.92 Microelectrónica. Tecnologías III-V y Alternativas
DOCUMENT TYPE: conferenceObject

ABSTRACT

This work presents a complete design process of a high-gain MMIC Class-J power amplifier (PA) based on the 0.25−μm A1GaAs-InGaAs pHEMT technology at X-Band frequencies. The proposed technique can reduce the chip area and improve the energy efficiency. The simulation results indicate that the designed Class-J PA at 6V operation voltage achieves 18dB power gain, 56% PAE and output power of 27.6dBm at 1dB compression. The area size of two-stages PA is 0.9mm2 .
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