Diode power detector X‐parameters™ model extraction using LSNA‐based measurement system
IDENTIFICADOR UNIVERSAL: http://hdl.handle.net/11093/3845
VERSIÓN EDITADA: https://onlinelibrary.wiley.com/doi/10.1049/el.2012.3339
MATERIA UNESCO: 3307.08 Dispositivos de Microondas ; 3307.14 Dispositivos Semiconductores ; 3307.92 Microelectrónica. Tecnologías III-V y Alternativas
TIPO DE DOCUMENTO: article
A study is presented on the problems that may arise when characterising low frequency device behaviour with a large signal network analyser (LSNA)-based measurement system. A diode power detector has been measured and, for the first time, an X-parameters based detector model was extracted from measurements. Difficulties measuring the detector output voltage dependence with baseband impedances, especially when those impedances showed resonant effects, were observed and a method to overcome the problems encountered is presented. The measurement-based detector X-parameters model demonstrated its usefulness to predict power detector behaviour under two-tone excitations and complex loads.
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