RT Journal Article
T1 Raman shifts in MBE‐grown SixGe1 - x - ySny alloys with large Si content
A1 Schlipf, Jon
A1 Tetzner, Henriette
A1 Spirito, Davide
A1 Manganelli, Costanza L.
A1 Capellini, Giovanni
A1 Huang, Michael R. S.
A1 Koch, Christoph T.
A1 Clausen, Caterina J.
A1 Elsayed, Ahmed
A1 Oehme, Michael
A1 Chiussi , Stefano
A1 Schulze, Jörg
A1 Fischer, Inga A.
K1 2211.25 Semiconductores
K1 2206.07 Espectroscopia Molecular
K1 3312 Tecnología de Materiales
AB We examine the Raman shift in silicon–germanium–tin alloys with high silicon content grown on a germanium virtual substrate by molecular beam epitaxy. The Raman shifts of the three most prominent modes, Si–Si, Si–Ge, and Ge–Ge, are measured and compared with results in previous literature. We analyze and fit the dependence of the three modes on the composition and strain of the semiconductor alloys. We also demonstrate the calculation of the composition and strain of SixGe1 − x − ySny from the Raman shifts alone, based on the fitted relationships. Our analysis extends previous results to samples lattice matched on Ge and with higher Si content than in prior comprehensive Raman analyses, thus making Raman measurements as a local, fast, and nondestructive characterization technique accessible for a wider compositional range of these ternary alloys for silicon-based photonic and microelectronic devices
PB Journal of Raman Spectroscopy
SN 03770486
YR 2021
FD 2021-03-24
LK http://hdl.handle.net/11093/3191
UL http://hdl.handle.net/11093/3191
LA eng
NO Journal of Raman Spectroscopy, 52(6): 1167-1175 (2021)
NO Deutsche Forschungsgemeinschaft | Ref. KO 2911/13‐1
DS Investigo
RD 24-sep-2023