RT Journal Article
T1 A survey on RF and microwave doherty power amplifier for mobile handset applications
A1 Sajedin, Maryam
A1 Elfergani, I.T.E.
A1 Rodríguez, Jonathan
A1 Abd-Alhameed, Raed
A1 Fernández Barciela, Mónica
K1 3307.08 Dispositivos de Microondas
K1 3307.19 Transistores
K1 3325.08 Teléfono
AB This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.
PB Electronics
SN 20799292
YR 2019
FD 2019-06-25
LK http://hdl.handle.net/11093/3472
UL http://hdl.handle.net/11093/3472
LA eng
NO Electronics, 8(6): 717 (2019)
NO Agencia Estatal de Investigación | Ref. TEC2017-88242-C3-2-R
DS Investigo
RD 04-oct-2023