RT conferenceObject
T1 Device modeling with small-signal X-parameters measured with a special PNA-X configuration for the study of non-linear interactions
A1 Peláez Pérez, Ana María
A1 Alonso Montes, José Ignacio
A1 Fernández Barciela, Mónica
A1 Tasker, Paul J
A2 IEEE
K1 3307.92 Microelectrónica. Tecnologías III-V y Alternativas
K1 3325.04 Enlaces de Microondas
K1 3307.14 Dispositivos Semiconductores
AB Recently, X-parameters have been introduced to model device non-linear behavior. In addition to providing a measurement-based tool to numerically predict non-linear in-band device behavior in CAD, they can also provide the designer of non-linear circuits the ability to improve the knowledge of the out-of-band device behavior. Exploiting this crucial design aspect, this work presents a novel measurement setup which enables small-signal X-parameters measurements, of non-linear devices driven by a large-signal tone at a pump frequency fc, in order to predict out-of-band performance at the perturbation frequency, fx, far removed from the pump frequency fc. The proposed measurement setup is made up of a Non-linear Vector Network Analyzer PNA-X and a passive tuner in order to enable load-pull characterization at the pump frequency fc. The developed architecture has been tested for a SiGe HBT, by sweeping the large-signal tone frequency over a narrow bandwidth around 5 GHz and for a broadband low perturbation frequency swept from 200 MHz to 1 GHz in steps of 200 MHz. The usefulness of the obtained small-signal X-parameters for the analysis of small-signal/large-signal nonlinear interactions, such as parametric oscillations, is shown.
SN 978-2-87487-028-6
YR 2012
FD 2012
LK http://hdl.handle.net/11093/3504
UL http://hdl.handle.net/11093/3504
LA eng
NO Ministerio de Ciencia e Innovación | Ref. TEC2008- 02148
DS Investigo
RD 18-may-2025