RT Journal Article
T1 Fully functional nonlinear table-based HBT model with explicit thermal feedback
A1 Rodríguez Testera, Alejandro
A1 Fernández Barciela, Mónica
A1 Fernández Manín, Generosa
A1 Mojón Ojea, Orentino
A1 Sánchez Sánchez, Enrique
A1 Tasker, Paul J
K1 3307.08 Dispositivos de Microondas
K1 3307.14 Dispositivos Semiconductores
K1 3307.92 Microelectrónica. Tecnologías III-V y Alternativas
AB A fully functional table-based nonlinear model of the heterojunction bipolar transistor (HBT) is presented which includes explicit thermal feedback. The model uses four table-based nonlinear functions: I c , Q c , V be , and Q b , all defined versus I b and V ce by using a nonuniform bias grid. Thermal modeling (self-biasing and environment temperature dependence, T a ) is done by linearly mapping the table-based current functions versus T a coupled with explicit thermal feedback. Four table-based nonlinear coefficients are required to accurately predict the device behavior versus temperature. Excellent results have been obtained under dc, small, and large signal excitations for InGaP/GaAs HBTs in the range 10degC to 110degC.
PB IEEE Microwave and Wireless Components Letters
SN 15311309
YR 2007
FD 2007-08
LK http://hdl.handle.net/11093/3520
UL http://hdl.handle.net/11093/3520
LA eng
NO IEEE Microwave and Wireless Components Letters, 17(8): 601-603 (2007)
NO Comisión Interministerial de Ciencia y Tecnológia | Ref. TIC2002-03167
DS Investigo
RD 05-oct-2023