RT Journal Article
T1 Diode power detector X‐parameters™ model extraction using LSNA‐based measurement system
A1 Rodríguez Testera, Alejandro
A1 Mojón Ojea, Orentino
A1 Boaventura, Alírio S
A1 Fernández Barciela, Mónica
A1 Carvalho, Nuno Borges
A1 Bossche, M. Vanden
A1 Pailloncy, G
K1 3307.08 Dispositivos de Microondas
K1 3307.14 Dispositivos Semiconductores
K1 3307.92 Microelectrónica. Tecnologías III-V y Alternativas
AB A study is presented on the problems that may arise when characterising low frequency device behaviour with a large signal network analyser (LSNA)-based measurement system. A diode power detector has been measured and, for the first time, an X-parameters based detector model was extracted from measurements. Difficulties measuring the detector output voltage dependence with baseband impedances, especially when those impedances showed resonant effects, were observed and a method to overcome the problems encountered is presented. The measurement-based detector X-parameters model demonstrated its usefulness to predict power detector behaviour under two-tone excitations and complex loads.
PB Electronics Letters
SN 00135194
YR 2013
FD 2013-01
LK http://hdl.handle.net/11093/3845
UL http://hdl.handle.net/11093/3845
LA eng
NO Electronics Letters, 49(3): 196-198 (2013)
NO Ministerio de Ciencia e Innovación | Ref. TEC2011-29264-C03-03
DS Investigo
RD 30-sep-2023