RT conferenceObject
T1 GaN-based Class J and Doherty Hybrid Power Amplifiers for C-band communications
A1 Aguiar Armada, Diego
A1 Morales Fernandez, Ainhoa
A1 Fernández Barciela, Mónica
A1 Martín Rodríguez, Fernando
A1 Isasi De Vicente, Fernando Guillermo
A2 Universidad de Málaga
K1 3307.08 Dispositivos de Microondas
K1 3307.14 Dispositivos Semiconductores
K1 3307.92 Microelectrónica. Tecnologías III-V y Alternativas
AB Gallium Nitride (GaN) is nowadays the leading semiconductor technology for the design of transmitters  with high RF power at microwave and millimeter wave frequency bands. This paper describes the design, assembly and validation of Class J and Doherty Power Amplifiers (PA) for C-band communications using  GaN HEMTs and hybrid technology. The RF performance of each fabricated prototype is assessed and compared to simulations. In simulation, the Class J PA provided at 5.8 GHz 37.3 dBm of RF output power, 14 dB of transducer power gain and 53% of PAE (Power Added Efficiency) at 2 dB compression. The  measured RF performance achieved 36 dBm of output power, 12 dB of gain and 47 % of PAE at a slightly lower frequency in C band. On the other hand, the simulated Doherty PA (DPA) achieved at 5.8 GHz a  drain efficiency (η) greater than 50% (from 34 to 40 dBm of output power) within the Doherty regime, while providing between 10 and 11.8 dB of gain in the same 6 dB range. The DPA prototype showed lower  measured performance than in simulation, providing 9 dB of gain and 39 dBm of maximum output power in C band
YR 2022
FD 2022
LK http://hdl.handle.net/11093/3900
UL http://hdl.handle.net/11093/3900
LA spa
NO Agencia Española Investigación | Ref. TEC2017-88242-C3-2-R
DS Investigo
RD 06-oct-2024