TY  - GEN 
AU  - Peláez Pérez, Ana María
AU  - Rodríguez Testera, Alejandro
AU  - Mojón Ojea, Orentino
AU  - Fernández Barciela, Mónica
AU  - Tasker, Paul J
AU  - Alonso Montes, José Ignacio
PY  - 2010
UR  - http://hdl.handle.net/11093/3487
AB  - Recently new behavioral model formulations, i.e. PHD model, X-parameters, have been shown to robustly describe the nonlinear behavior of transistors. Such models being obtained from measurements performed using the emerging family of nonlinear network...
LA  - eng
TI  - Utilization and validation of HBT nonlinear frequency domain behavioral models in the design and simulation of oscillator circuits
DO  - 10.23919/EUMC.2010.5616685
ER  -