TY  - GEN 
AU  - Aguiar Armada, Diego
AU  - Morales Fernandez, Ainhoa
AU  - Fernández Barciela, Mónica
AU  - Martín Rodríguez, Fernando
AU  - Isasi De Vicente, Fernando Guillermo
PY  - 2022
UR  - http://hdl.handle.net/11093/3900
AB  - Gallium Nitride (GaN) is nowadays the leading semiconductor technology for the design of transmitters  with high RF power at microwave and millimeter wave frequency bands. This paper describes the design, assembly and validation of Class J and Doherty...
LA  - spa
TI  - GaN-based Class J and Doherty Hybrid Power Amplifiers for C-band communications
ER  -